The mechanism of stimulated Raman scattering of light in silicon doped with helium-like donors
R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod Abstract: Silicon doped with neutral helium-like magnesium donors was theoretically studied as an active medium in the terahertz frequency range. The inversion mechanism implemented in Si: Mg does not have the necessary efficiency under optical… Read More »