Cavity optimisation of high-power InGaAs/AlGaAs/GaAs semiconductor lasers (λ=1060 nm) for efficient operation at ultrahigh pulsed pump currents

Abstract: On the basis of the developed numerical 2D semiconductor laser model, we study the effect of cavity parameters on optical losses and analyse the choice of the optimal cavity parameters for efficient operation under ultrahigh pulsed pump currents. It is shown that a maximum peak optical power for a certain pump current amplitude is achieved for a combination of optimal cavity parameters: the cavity length L_opt and the refractive index of the output mirror R_{AR  opt}. It is demonstrated that an increase in optical power with decreasing R_AR is limited due to the formation of a local region with high optical losses and recombination loss currents near the high reflective mirror.

Keywords: diode laser model, rate equations, charge carrier transport, longitudinal spatial hole burning, longitudinal spatial current burning, laser diode, high-power laser diode, drift-diffusion transport.