Formation of laser-induced periodic structures on thin films of transition metal nitrides and semiconductors

By | 13.09.2024

K. A. Bronnikov, S. A. Gladkikh, K. A. Okotrub, V. P. Korolkov, A. A. Kuchmizhak, A. V. Dostovalov

  • Institute of Automation and Electrometry, Siberian Branch of Russian Academy of Sciences, Novosibirsk
  • Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
  • Pacific Quantum Center, Far Eastern Federal University
Abstract: We report the results of the formation of laser-induced periodic surface structures (LIPSS’s) on 25–400-nm-thick TiN, CrN, and Ge3N4 films using femtosecond laser pulses in the visible and IR ranges. The effect of laser irradiation parameters (wavelength, pulse energy, and scanning speed) on the morphology and chemical composition of the formed structures is studied. The formation of ordered thermochemical LIPSS’s with a nitride/oxide complex composition in the case of TiN and CrN films and ablative LIPSS’s with a short period in the case of a Ge3N4 film is found.
Keywords: laser-induced periodic surface structures, transition metal nitrides, semiconductor nitrides.
Received: 16.09.2022
Revised: 27.10.2022
Accepted: 27.10.2022