D. V. Gulyaev, K. S. Zhuravlev
- Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090, Novosibirsk, Russia
Abstract: The review examines telecom electro-optic modulators made of group III–V compound semiconductor material composed of indium phosphide. The operation principles of modulators and issues of heterostructure and modulator design optimization are considered; the results of recent developments and the achieved parameters of modulators are presented.
Keywords: electro-optic modulator, electro-absorption modulator, InP, InGaAlAs, quantum wells, Stark effect.
The work was performed within the framework of the State assignment of the Ministry of Science and Higher Education of the Russian Federation (no. FWGW-2022-0005).
Received: 29.11.2023
Accepted: 01.02.2024