V. I. Kozlovsky, S. M. Zhenishbekov, Ya. K. Skasyrsky, M. P. Frolov, A. Yu. Andreev, I. V. Yarotskaya, A. A. Marmalyuk
- Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia
- Polyus Research Institute of M. F. Stelmakh Joint Stock Company, 117342, Moscow, Russia
Abstract: We report a study of a semiconductor disk laser (SDL) based on the AlxGa1-xAs/AlyGa1-yAs heterostructure, emitting at a wavelength near 780 nm, pumped by a pulsed dye laser with emission wavelengths of 601 and 656 nm. Use is made of a structure with a built-in Bragg mirror and 10 quantum wells (QWs) arranged in depth with a period equal to half the wavelength of laser radiation in the structure. Under pumping with λ = 601 nm, a power of 9.3 W is reached at a wavelength of 782 nm with a differential efficiency of 12%. Under pumping with λ = 656 nm, the differential efficiency remains almost unchanged, although the pump absorption in depth is more uniform. These results are compared with those obtained previously under pumping by lasers with wavelengths of 450 and 532 nm, as well as under electron-beam pumping. It is concluded that the distribution of nonequilibrium carriers over the QW is largely determined by their diffusion length, which is approximately 1 μm in this structure.
Keywords: semiconductor disk laser, AlxGa1-xAs/AlyGa1-yAs heterostructure, optical pumping, quantum wells.
Received: 26.05.2023
Revised: 03.10.2023