Cavity optimisation of high-power InGaAs/AlGaAs/GaAs semiconductor lasers (λ=1060 nm) for efficient operation at ultrahigh pulsed pump currents
S. O. Slipchenko, O. S. Soboleva, V. S. Golovin, N. A. Pikhtin Ioffe Institute, St. Petersburg Abstract: On the basis of the developed numerical 2D semiconductor laser model, we study the effect of cavity parameters on optical losses and analyse the choice of the optimal cavity parameters for efficient operation under ultrahigh pulsed pump currents. It… Read More »