A. Rizaev – QUANTUM ELECTRONICS

Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses

A. A. Podoskin, I. Shushkanov, V. V. Shamakhov, A. Rizaev, M. Kondratov, A. A. Klimov, S. V. Zazulin, S. O. Slipchenko, N. A. Pikhtin Ioffe Institute, St. Petersburg “FID Technology” Research and Production Association, St. Petersburg Abstract: We report the development and investigation of laser diodes based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active… Read More »

Lateral waveguide mode selection for the development of single-mode ridge lasers with a distributed Bragg mirror

V. V. Zolotarev, A. Rizaev, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin Ioffe Institute, St. Petersburg Abstract: The possibility of mode selection in lateral mesa-stripe waveguides for the implementation of single-mode lasers with a surface distributed Bragg reflector (DBR) is studied theoretically. The dependence of mode discrimination of TE00 and TE01 lateral modes… Read More »