Tag Archives: G. T. Mikayelyan

Effect of the thickness of the passivating reactive titanium layer of mirror facets on the electrical characteristics of diode lasers

N. S. Utkov, A. E. Drakin, G. T. Mikayelyan a Lassard systems, Obninsk, Moscow region b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow c Inject Ltd., Saratov Abstract: A method is described for determining an allowable thickness of a titanium layer for passivating emitting faces of a diode laser. Reactive… Read More »