Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses
A. A. Podoskin, I. Shushkanov, V. V. Shamakhov, A. Rizaev, M. Kondratov, A. A. Klimov, S. V. Zazulin, S. O. Slipchenko, N. A. Pikhtin Ioffe Institute, St. Petersburg “FID Technology” Research and Production Association, St. Petersburg Abstract: We report the development and investigation of laser diodes based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active… Read More »