Tag Archives: N. A. Pikhtin

Cavity optimisation of high-power InGaAs/AlGaAs/GaAs semiconductor lasers (λ=1060 nm) for efficient operation at ultrahigh pulsed pump currents

S. O. Slipchenko, O. S. Soboleva, V. S. Golovin, N. A. Pikhtin Ioffe Institute, St. Petersburg Abstract: On the basis of the developed numerical 2D semiconductor laser model, we study the effect of cavity parameters on optical losses and analyse the choice of the optimal cavity parameters for efficient operation under ultrahigh pulsed pump currents. It… Read More »

High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch

S. O. Slipchenko, A. A. Podoskin, V. V. Zolotarev, L. S. Vavilova, A. Yu. Leshko, M. G. Rastegaeva, I. V. Miroshnikov, I. S. Shashkin, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. A. Simakov  Ioffe Institute, St. Petersburg  Polyus Research and Development Institute named after M. F. Stel’makh, Moscow Abstract:… Read More »

Quasi-cw high-power laser diode mini bars (λ=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide

S. O. Slipchenko, A. A. Podoskin, V. A. Kryuchkov, V. A. Strelets, I. S. Shashkin, N. A. Pikhtin Ioffe Institute, St. Petersburg Abstract: Mini laser bars with 6-mm resonator length that include 5×100 μm emitters with a 25% fill factor are designed. It is shown that under pump current pulses of 1.0–9.5 ms duration (a 10… Read More »

Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses

A. A. Podoskin, I. Shushkanov, V. V. Shamakhov, A. Rizaev, M. Kondratov, A. A. Klimov, S. V. Zazulin, S. O. Slipchenko, N. A. Pikhtin Ioffe Institute, St. Petersburg “FID Technology” Research and Production Association, St. Petersburg   Abstract: We report the development and investigation of laser diodes based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active… Read More »

Lateral waveguide mode selection for the development of single-mode ridge lasers with a distributed Bragg mirror

V. V. Zolotarev, A. Rizaev, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin Ioffe Institute, St. Petersburg Abstract: The possibility of mode selection in lateral mesa-stripe waveguides for the implementation of single-mode lasers with a surface distributed Bragg reflector (DBR) is studied theoretically. The dependence of mode discrimination of TE00 and TE01 lateral modes… Read More »

Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide emitting aperture (800 μm)

I. S. Shashkin, A. D. Rybkin, V. A. Kryuchkov, A. E. Kazakova, D. N. Romanovich, N. A. Rudova, S. O. Slipchenko, N. A. Pikhtin Ioffe Institute, St. Petersburg Abstract: An approach has been developed to study temporal behaviour of the active region overheating in high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide aperture… Read More »