Tag Archives: V. A. Kryuchkov

Quasi-cw high-power laser diode mini bars (λ=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide

S. O. Slipchenko, A. A. Podoskin, V. A. Kryuchkov, V. A. Strelets, I. S. Shashkin, N. A. Pikhtin Ioffe Institute, St. Petersburg Abstract: Mini laser bars with 6-mm resonator length that include 5×100 μm emitters with a 25% fill factor are designed. It is shown that under pump current pulses of 1.0–9.5 ms duration (a 10… Read More »

Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide emitting aperture (800 μm)

I. S. Shashkin, A. D. Rybkin, V. A. Kryuchkov, A. E. Kazakova, D. N. Romanovich, N. A. Rudova, S. O. Slipchenko, N. A. Pikhtin Ioffe Institute, St. Petersburg Abstract: An approach has been developed to study temporal behaviour of the active region overheating in high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide aperture… Read More »