Tag Archives: V. M. Kanevsky

Some peculiarities of the near-band-edge emission from ZnO crystals grown on Si whiskers

Ch. M. Briskina, V. M. Markushev, L. A. Zadorozhnaya, M. E. Givargizov, V. N. Yashkov, I. S. Volchkov, V. M. Kanevsky Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow Shubnikov Institute of Crystallography, Federal Scientific Research Centre ‘Crystallography and Photonics’, Russian Academy of Sciences, Moscow Abstract: The nature of the room-temperature… Read More »