F. I. Zubov, Yu. M. Shernyakov, N. Yu. Gordeev, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. E. Zhukov
- Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
- Ioffe Institute, St. Petersburg
- National Research University “Higher School of Economics”
Abstract: Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky – Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134 – 153 cm–1) optical losses is demonstrated. The saturated modal gain is estimated to be 45 cm–1 per quantum dot layer, which exceeds the values typical for conventional quantumdot lasers by several times.
Keywords: semiconductor laser, quantum dots, optical gain.
This work was supported by the Russian Science Foundation (Grant No. 19-72-30010). The optical investigations were performed within the Basic Research Programme of the National Research University ‘Higher School of Economics’.
Received: 18.03.2022