{"id":8250,"date":"2024-09-15T19:28:55","date_gmt":"2024-09-15T16:28:55","guid":{"rendered":"https:\/\/quantum-electronics.ru\/en\/?p=8250"},"modified":"2024-09-16T13:50:07","modified_gmt":"2024-09-16T10:50:07","slug":"high-power-multimode-semiconductor-lasers-976-nm-based-on-asymmetric-heterostructures-with-a-broadened-waveguide-and-reduced-vertical-divergence","status":"publish","type":"post","link":"https:\/\/quantum-electronics.ru\/en\/high-power-multimode-semiconductor-lasers-976-nm-based-on-asymmetric-heterostructures-with-a-broadened-waveguide-and-reduced-vertical-divergence\/","title":{"rendered":"High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence"},"content":{"rendered":"<p>S. O. Slipchenko, A. A. Podoskin, D. N. Nikolaev, V. V. Shamakhov, I. S. Shashkin, M. Kandratov, I. Gordeev, A. E. Grishin, A. E. Kazakova, P. S. Gavrina, K. Bakhvalov, P. S. Kop\u2019ev, N. A. Pikhtin<\/p>\n<ul>\n<li>Ioffe Institute, St.\u00a0Petersburg<\/li>\n<\/ul>\n<div class=\"around-button\"><b>Abstract:<\/b> The effect of the active region design on the vertical far field divergence of high-power semiconductor lasers based on asymmetric heterostructures with a broadened waveguide of 4 \u03bcm thickness, with one (SQW) and two (DQW) InGaAs quantum wells is studied. It is shown that the number of quantum wells has a significant effect on the divergence, that is determined by the angle containing 95 % of the radiated power (<i>\u0398<\/i><sub>95%<\/sub>). The beam divergence at the half-maximum level of 12.9\u00b0 for asymmetric heterostructures with the SQW active region is demonstrated. It is experimentally shown that the change-over to the DQW from the SQW design of the active region leads to the increase in the value of <i>\u0398<\/i><sub>95%<\/sub> from 23.2\u00b0 to 41.8\u00b0. For both types of the structures the internal optical losses and the internal quantum efficiency of 0.27 cm<sup>\u20131<\/sup> and 99 %, respectively, is demonstrated. Basing on asymmetric heterostructures with the active SQW region we demonstrate high-power semiconductor lasers emitting the power of 9 W in the continuous mode at the temperature and pump current: 25 \u00b0C\/10 A, 55 \u00b0C\/11.4 A.<\/div>\n<div class=\"around-button\"><b>Keywords:<\/b> <i>high-power semiconductor lasers, vertical far field divergence, active region design, angle containing 95 % of the radiated power.<\/i><\/div>\n<div><\/div>\n<div><b>Received:<\/b> 09.11.2022<br \/>\n<b>Revised:<\/b> 13.02.2023<\/div>\n","protected":false},"excerpt":{"rendered":"<p>S. O. Slipchenko, A. A. Podoskin, D. N. Nikolaev, V. V. Shamakhov, I. S. Shashkin, M. Kandratov, I. Gordeev, A. E. Grishin, A. E. Kazakova, P. S. Gavrina, K. Bakhvalov, P. S. Kop\u2019ev, N. A. Pikhtin Ioffe Institute, St.\u00a0Petersburg Abstract: The effect of the active region design on the vertical far field divergence of high-power\u2026 <span class=\"read-more\"><a href=\"https:\/\/quantum-electronics.ru\/en\/high-power-multimode-semiconductor-lasers-976-nm-based-on-asymmetric-heterostructures-with-a-broadened-waveguide-and-reduced-vertical-divergence\/\">Read More &raquo;<\/a><\/span><\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[1],"tags":[],"class_list":["post-8250","post","type-post","status-publish","format-standard","hentry","category-stats"],"_links":{"self":[{"href":"https:\/\/quantum-electronics.ru\/en\/wp-json\/wp\/v2\/posts\/8250","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/quantum-electronics.ru\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/quantum-electronics.ru\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/quantum-electronics.ru\/en\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/quantum-electronics.ru\/en\/wp-json\/wp\/v2\/comments?post=8250"}],"version-history":[{"count":0,"href":"https:\/\/quantum-electronics.ru\/en\/wp-json\/wp\/v2\/posts\/8250\/revisions"}],"wp:attachment":[{"href":"https:\/\/quantum-electronics.ru\/en\/wp-json\/wp\/v2\/media?parent=8250"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/quantum-electronics.ru\/en\/wp-json\/wp\/v2\/categories?post=8250"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/quantum-electronics.ru\/en\/wp-json\/wp\/v2\/tags?post=8250"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}