{"id":8431,"date":"2024-09-15T22:36:20","date_gmt":"2024-09-15T19:36:20","guid":{"rendered":"https:\/\/quantum-electronics.ru\/en\/?p=8431"},"modified":"2024-09-16T15:31:25","modified_gmt":"2024-09-16T12:31:25","slug":"high-power-pulsed-in-well-pumped-ingap-algainp-heterostructure-semiconductor-disk-laser","status":"publish","type":"post","link":"https:\/\/quantum-electronics.ru\/en\/high-power-pulsed-in-well-pumped-ingap-algainp-heterostructure-semiconductor-disk-laser\/","title":{"rendered":"High-power pulsed, in-well-pumped InGaP\/AlGaInP heterostructure, semiconductor disk laser"},"content":{"rendered":"
V. I. Kozlovsky, S. M. Zhenishbekov, Ya. K. Skasyrsky, M. P. Frolov<\/p>\n
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Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia<\/li>\n<\/ul>\n
Abstract:<\/b> We report an investigation of a semiconductor disk laser (SDL) based on an InGaP\/AlGaInP heterostructure emitting at a wavelength near 640 nm under in-well pumping by a pulsed rhodamine 6G dye laser with an emission wavelength of 601 nm. Use is made of structures with 25 quantum wells arranged in depth with a period of 193 nm. In a structure with a built-in Bragg mirror, a power of 3.5 W is reached at a wavelength of 642 nm with a slope efficiency of 7% with respect to the absorbed pump power. The achieved second harmonic power at a wavelength of 321 nm is approximately 30% of the maximum SDL power at the fundamental frequency. Under pumping above 250 W, the structure is destroyed due to strong adiabatic heating of the GaAs growth substrate. In a structure with a deposited broadband dielectric mirror, it is possible to reduce the adiabatic heating factor, implement double-pass pumping, and, accordingly, increase the supplied pump power. This makes it possible to obtain a pulse power of higher than 70 W at a wavelength of 645.5 nm with a slope efficiency of over 17%.<\/div>\n