Features of high-power uni-traveling-carrier InGaAs/InP photodiodes
N. N. Bragin, V. N. Svetogorov, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Ivanov, M. A. Ladugin Polyus Research Institute of M. F. Stelmakh Joint Stock Company, 117342, Moscow, Russia Abstract: A comparison is made of conventional pin photodetectors and modern uni-traveling-carrier photodetectors based on InGaAs/InP heterostructures. The differences in the designs of heterostructures… Read More »