InP-based electro-optic and electro-absorption modulators for the 1.5-μm spectral range
D. V. Gulyaev, K. S. Zhuravlev Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090, Novosibirsk, Russia Abstract: The review examines telecom electro-optic modulators made of group III–V compound semiconductor material composed of indium phosphide. The operation principles of modulators and issues of heterostructure and modulator design optimization are considered; the… Read More »